( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1511/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this.
EL BROADBAND RF POWER MOSFET
CASE 466
–02, STYLE 1 (PLD
–1.5) PLASTIC
MAXIMUM RATINGS
Rating Drain
–Source Voltage Gate
–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value 40 ± 20 4 62.5 0.5
– 65 to +150 150 Unit Vdc Vdc Adc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case (1) Calculated based on the formula PD = TJ
– TC RθJC Symbol RθJC Max 2 Unit °C/W
NOTE
– CAUTION
– MOS devices are susceptible to damage fr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MRF1511NT1 |
Motorola |
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET | |
2 | MRF151 |
Tyco Electronics |
N-CHANNEL BROADBAND RF POWER MOSFET | |
3 | MRF151 |
Motorola |
N-CHANNEL BROADBAND RF POWER MOSFET | |
4 | MRF1513NT1 |
Freescale Semiconductor |
RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET | |
5 | MRF1513T1 |
Motorola |
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET | |
6 | MRF1517NT1 |
Freescale Semiconductor |
RF Power Field Effect Transistor | |
7 | MRF1517T1 |
Motorola |
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET | |
8 | MRF1518NT1 |
Motorola |
RF Power Field Effect Transistor | |
9 | MRF1518T1 |
Motorola |
RF Power Field Effect Transistor | |
10 | MRF1518T1 |
Motorola |
The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR | |
11 | MRF151A |
MA-COM |
RF Power FET | |
12 | MRF151A |
Tyco Electronics |
RF Power Field-Effect Transistor |