MRF1518NT1 - Motorola

MRF1518NT1 RF Power Field Effect Transistor

( DataSheet : www.DataSheet4U.com ) Freescale Semiconductor Technical Data MRF1518 Rev. 6, 3/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large- signal, .

Features

5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature (1) Symbol VDSS VGS ID PD Tstg TJ Value - 0.5, +40 ± 20 4 62.5 0.50 - 65 to +150 150 Unit Vdc Vdc Adc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 2 Unit °C/W Table 3. Moisture Sensitivity Level Test Methodology Per J.