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MRF1511T1 |
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| Part Number | MRF1511T1 |
| Manufacturer | Motorola |
| Description | ( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1511/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral ... |
| Features |
EL BROADBAND RF POWER MOSFET
CASE 466 –02, STYLE 1 (PLD –1.5) PLASTIC MAXIMUM RATINGS Rating Drain –Source Voltage Gate –Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value 40 ± 20 4 62.5 0.5 – 65 to +150 150 Unit Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Calculated based on the formula PD = TJ – TC RθJC Symbol RθJC Max 2 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage fr... |
| Document |
 MRF1511T1 Data Sheet
PDF 504.97KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF1511NT1 |
Motorola |
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET |
|
| 2 | MRF151 |
Tyco Electronics |
N-CHANNEL BROADBAND RF POWER MOSFET |
|
| 3 | MRF151 |
Motorola |
N-CHANNEL BROADBAND RF POWER MOSFET |
|
| 4 | MRF1513NT1 |
Freescale Semiconductor |
RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET |
|
| 5 | MRF1513T1 |
Motorola |
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET |
|