MRF1513NT1 - Freescale Semiconductor

MRF1513NT1 RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET

www.DataSheet4U.com Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large−signal, common source amplifi.

Features

466−03, STYLE 1 PLD−1.5 PLASTIC Table 1. Maximum Ratings Rating Drain−Source Voltage Gate−Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value −0.5, +40 ± 20 2 31.25 0.25 − 65 to +150 150 Unit Vdc Vdc Adc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 4 Unit °C/W Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22−A113, IPC/JEDEC J−STD−020 1. Calculated based on the formu.