MRF1517NT1 - Freescale Semiconductor

MRF1517NT1 RF Power Field Effect Transistor

Freescale Semiconductor Technical Data Document Number: MRF1517N Rev. 5, 9/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large- signal, common source amplif.

Features

• Characterized with Series Equivalent Large - Signal G Impedance Parameters
• Excellent Thermal Stability
• Broadband UHF/VHF Demonstration Amplifier S Information Available Upon Request
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. MRF1517NT1 520 MHz, 8 W, 7.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating www.DataSheet4U.com Symbol VDSS VGS ID Value - 0.5, +25 ± 20 4 62.5 0.50 - 65 to +150 150 Unit Vdc Vdc Adc W W/°C .