www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF141/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state.
nge Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 65 65 ± 40 16 300 1.71
– 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
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REV 8
RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997
MRF141 1
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characte.
The MRF141 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for 175 MHz 150 W Transmitter and Amplif.
www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MRF141/D The RF MOSFET Line RF Powe r Field-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MRF140 |
Motorola |
N-CHANNEL MOS LINEAR RF POWER FET | |
2 | MRF140 |
Tyco Electronics |
N-CHANNEL MOS LINEAR RF POWER FET | |
3 | MRF141G |
Tyco Electronics |
N-CHANNEL BROADBAND RF POWER MOSFET | |
4 | MRF141G |
Motorola |
N-CHANNEL BROADBAND RF POWER MOSFET | |
5 | MRF141G |
MA-COM |
RF Power FET | |
6 | MRF148 |
Motorola |
N-CHANNEL MOS LINEAR RF POWER FET | |
7 | MRF148A |
MACOM |
Linear RF Power FET | |
8 | MRF10005 |
Tyco |
The RF Line Microwave Power Transistor | |
9 | MRF10005 |
Motorola |
MICROWAVE POWER TRANSISTOR | |
10 | MRF1000MB |
Tyco |
Microwave Pulse Power Transistors | |
11 | MRF1001A |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
12 | MRF1002 |
Motorola |
MICROWAVE POWER TRANSISTOR |