MRF141 |
Part Number | MRF141 |
Manufacturer | Motorola |
Description | www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF141/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadba... |
Features |
nge Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 65 65 ± 40 16 300 1.71 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. www.DataSheet4U.com REV 8 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997 MRF141 1 www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characte... |
Document |
MRF141 Data Sheet
PDF 171.02KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MRF140 |
Motorola |
N-CHANNEL MOS LINEAR RF POWER FET | |
2 | MRF140 |
Tyco Electronics |
N-CHANNEL MOS LINEAR RF POWER FET | |
3 | MRF141 |
Tyco Electronics |
N-CHANNEL BROADBAND RF POWER MOSFET | |
4 | MRF141 |
Advanced Semiconductor |
RF FIELD-EFFECT POWER TRANSISTOR | |
5 | MRF141G |
Tyco Electronics |
N-CHANNEL BROADBAND RF POWER MOSFET |