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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF140/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Effi.
TICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
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REV 8
RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997
MRF140 1
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain
–Source Breakdown Voltage (VGS = 0, ID = 100 mA) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) Gat.
MRF140 - Tyco Electronics
www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MRF140/D The RF MOSFET Line RF Power Field-E.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF141 |
Motorola |
N-CHANNEL BROADBAND RF POWER MOSFET |
|
| 2 | MRF141 |
Tyco Electronics |
N-CHANNEL BROADBAND RF POWER MOSFET |
|
| 3 | MRF141 |
Advanced Semiconductor |
RF FIELD-EFFECT POWER TRANSISTOR |
|
| 4 | MRF141G |
Tyco Electronics |
N-CHANNEL BROADBAND RF POWER MOSFET |
|
| 5 | MRF141G |
Motorola |
N-CHANNEL BROADBAND RF POWER MOSFET |
|
| 6 | MRF141G |
MA-COM |
RF Power FET |
|
| 7 | MRF148 |
Motorola |
N-CHANNEL MOS LINEAR RF POWER FET |
|
| 8 | MRF148A |
MACOM |
Linear RF Power FET |
|
| 9 | MRF10005 |
Tyco |
The RF Line Microwave Power Transistor |
|
| 10 | MRF10005 |
Motorola |
MICROWAVE POWER TRANSISTOR |
|
| 11 | MRF1000MB |
Tyco |
Microwave Pulse Power Transistors |
|
| 12 | MRF1001A |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|