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SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1000MB/D The RF Line Microwave Pulse Power Transistors Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. • Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A Output Power = 0.2 Watt Minimum Gain = 10 dB • .
s mW/°C °C CASE 332A
–03, STYLE 2
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 25 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector
–Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector
–Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) Collector
–Base Breakdown Voltage (IC = 5.0 mAdc, IE = 0) Emitter
–Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 20 50 50 3..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF10005 |
Tyco |
The RF Line Microwave Power Transistor |
|
| 2 | MRF10005 |
Motorola |
MICROWAVE POWER TRANSISTOR |
|
| 3 | MRF1001A |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 4 | MRF1002 |
Motorola |
MICROWAVE POWER TRANSISTOR |
|
| 5 | MRF10031 |
Motorola |
MICROWAVE POWER TRANSISTOR |
|
| 6 | MRF10031 |
MACOM |
Microwave Power Silicon NPN Transistor |
|
| 7 | MRF1004MA |
ASI |
NPN SILICON RF POWER TRANSISTOR |
|
| 8 | MRF1004MB |
Tyco |
MICROWAVE POWER TRANSISTORS |
|
| 9 | MRF10070 |
Motorola |
MICROWAVE POWER TRANSISTOR |
|
| 10 | MRF10120 |
Tyco |
MICROWAVE POWER TRANSISTORS |
|
| 11 | MRF10120 |
Motorola |
MICROWAVE POWER TRANSISTORS |
|
| 12 | MRF10150 |
Tyco |
MICROWAVE POWER TRANSISTORS |
|