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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF148/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD • Specified 50 Volts, 30 MHz Characteristics Output P.
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.52 Unit °C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
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REV 1
RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1995
MRF148 1
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain
–Source Breakdown Voltage (VGS = 0, ID = 10 mA) Zero Gate Voltage Drain Current (VDS = .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF140 |
Motorola |
N-CHANNEL MOS LINEAR RF POWER FET |
|
| 2 | MRF140 |
Tyco Electronics |
N-CHANNEL MOS LINEAR RF POWER FET |
|
| 3 | MRF141 |
Motorola |
N-CHANNEL BROADBAND RF POWER MOSFET |
|
| 4 | MRF141 |
Tyco Electronics |
N-CHANNEL BROADBAND RF POWER MOSFET |
|
| 5 | MRF141 |
Advanced Semiconductor |
RF FIELD-EFFECT POWER TRANSISTOR |
|
| 6 | MRF141G |
Tyco Electronics |
N-CHANNEL BROADBAND RF POWER MOSFET |
|
| 7 | MRF141G |
Motorola |
N-CHANNEL BROADBAND RF POWER MOSFET |
|
| 8 | MRF141G |
MA-COM |
RF Power FET |
|
| 9 | MRF148A |
MACOM |
Linear RF Power FET |
|
| 10 | MRF10005 |
Tyco |
The RF Line Microwave Power Transistor |
|
| 11 | MRF10005 |
Motorola |
MICROWAVE POWER TRANSISTOR |
|
| 12 | MRF1000MB |
Tyco |
Microwave Pulse Power Transistors |
|