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MRF140 |
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| Part Number | MRF140 |
| Manufacturer | Tyco Electronics |
| Description | www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MRF140/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–... |
| Features |
eristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
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REV 9
1
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain –Source Breakdown Voltage (VGS = 0, ID = 100 mA) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) Gate –Body Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 — — ... |
| Document |
 MRF140 Data Sheet
PDF 241.65KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF140 |
Motorola |
N-CHANNEL MOS LINEAR RF POWER FET |
|
| 2 | MRF141 |
Motorola |
N-CHANNEL BROADBAND RF POWER MOSFET |
|
| 3 | MRF141 |
Tyco Electronics |
N-CHANNEL BROADBAND RF POWER MOSFET |
|
| 4 | MRF141 |
Advanced Semiconductor |
RF FIELD-EFFECT POWER TRANSISTOR |
|
| 5 | MRF141G |
Tyco Electronics |
N-CHANNEL BROADBAND RF POWER MOSFET |
|