MRF1035MB - Motorola

MRF1035MB MICROWAVE POWER TRANSISTORS

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1035MB/D Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak Minimum Gain = 10 dB • 100% Tested for.

Features

A
  –03, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 5.0 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 20 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 2.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO ICBO 60 60 4.0 — — — — — — — — 2.0 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 500 mAdc, V.