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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10350/D Microwave Pulse Power Transistor Designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100% Tested for Load Mism.
65 65 3.5 31 1590 9.1
– 65 to + 200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.11 Unit °C/W
NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst Case θJC measured using Mode
–S pulse train, 128 µs burst 0.5 µs on, 0.5 µs off repeating at.
MRF10350 - Tyco
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10350/D The RF Line Microwave Pulse Power Transistor Designed .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF1035MB |
Motorola |
MICROWAVE POWER TRANSISTORS |
|
| 2 | MRF1030 |
Motorola |
UHF POWER TRANSISTOR |
|
| 3 | MRF1031 |
Motorola |
UHF POWER TRANSISTOR |
|
| 4 | MRF10005 |
Tyco |
The RF Line Microwave Power Transistor |
|
| 5 | MRF10005 |
Motorola |
MICROWAVE POWER TRANSISTOR |
|
| 6 | MRF1000MB |
Tyco |
Microwave Pulse Power Transistors |
|
| 7 | MRF1001A |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 8 | MRF1002 |
Motorola |
MICROWAVE POWER TRANSISTOR |
|
| 9 | MRF10031 |
Motorola |
MICROWAVE POWER TRANSISTOR |
|
| 10 | MRF10031 |
MACOM |
Microwave Power Silicon NPN Transistor |
|
| 11 | MRF1004MA |
ASI |
NPN SILICON RF POWER TRANSISTOR |
|
| 12 | MRF1004MB |
Tyco |
MICROWAVE POWER TRANSISTORS |
|