The ASI MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. PACKAGE STYLE .280 4L STUD FEATURES: • Class B and C Operation • Common Base • PG = 10 dB at 4.0 W/1090 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O 250 mA 20 V 7.0 W @ TC = 25°C -65 C to +200 °C -65 C to +150 °C 25.0 C/W.
• Class B and C Operation
• Common Base
• PG = 10 dB at 4.0 W/1090 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCE PDISS TJ TSTG θJC
O O
250 mA 20 V 7.0 W @ TC = 25°C -65 C to +200 °C -65 C to +150 °C 25.0 C/W
O
1 = Collector
2 = Emitter
3 & 4 = Base
CHARACTERISTICS
SYMBOL
BVCBO BVCEO BVEBO ICBO hFE PG ηC
TC = 25 C
O
NONETEST CONDITIONS
IC = 5.0 mA IC = 5.0 mA IE = 1.0 mA VCB = 35 V VCE = 5.0 V VCC = 35 V IC = 75 mA POUT = 4.0 W f = 1090 MHz
MINIMUM TYPICAL MAXIMUM
50 20 3.5 0.5 10 10 40 11 45 100
UNITS
V V V mA --dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MRF1004MB |
Tyco |
MICROWAVE POWER TRANSISTORS | |
2 | MRF10005 |
Tyco |
The RF Line Microwave Power Transistor | |
3 | MRF10005 |
Motorola |
MICROWAVE POWER TRANSISTOR | |
4 | MRF1000MB |
Tyco |
Microwave Pulse Power Transistors | |
5 | MRF1001A |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
6 | MRF1002 |
Motorola |
MICROWAVE POWER TRANSISTOR | |
7 | MRF10031 |
Motorola |
MICROWAVE POWER TRANSISTOR | |
8 | MRF10031 |
MACOM |
Microwave Power Silicon NPN Transistor | |
9 | MRF10070 |
Motorola |
MICROWAVE POWER TRANSISTOR | |
10 | MRF10120 |
Tyco |
MICROWAVE POWER TRANSISTORS | |
11 | MRF10120 |
Motorola |
MICROWAVE POWER TRANSISTORS | |
12 | MRF10150 |
Tyco |
MICROWAVE POWER TRANSISTORS |