MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1031/D UHF Power Transistor . . . designed primarily for wideband, large–signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers • Specified 25 Volt, 900 MHz Characteristics: Output Power — 4.5 Watts Power Gain — 7.0 dB Min, Class AB • .
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OFF CHARACTERISTICS
Collector
–Emitter Breakdown Voltage (IC = 20 mA, IB = 0) Collector
–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0) Collector
–Base Breakdown Voltage (IC = 20 mA, IE = 0) Emitter
–Base Breakdown Voltage (IE = 5.0 mA, IC = 0) Collector Cutoff Current (VCB = 25 V, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 30 60 60 4.0 — — — — — — — — — — 2.5 Vdc Vdc Vdc Vdc mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mA, VCE = 5.0 V) hFE 20 — 80 —
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 V, IE = 0, f = 1.0 MHz) Cob — — 14 pF
FUNCTIONAL TESTS
Common
–Emitter Amplif.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MRF1030 |
Motorola |
UHF POWER TRANSISTOR | |
2 | MRF10350 |
Tyco |
MICROWAVE POWER TRANSISTOR | |
3 | MRF10350 |
Motorola |
MICROWAVE POWER TRANSISTOR | |
4 | MRF1035MB |
Motorola |
MICROWAVE POWER TRANSISTORS | |
5 | MRF10005 |
Tyco |
The RF Line Microwave Power Transistor | |
6 | MRF10005 |
Motorola |
MICROWAVE POWER TRANSISTOR | |
7 | MRF1000MB |
Tyco |
Microwave Pulse Power Transistors | |
8 | MRF1001A |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
9 | MRF1002 |
Motorola |
MICROWAVE POWER TRANSISTOR | |
10 | MRF10031 |
Motorola |
MICROWAVE POWER TRANSISTOR | |
11 | MRF10031 |
MACOM |
Microwave Power Silicon NPN Transistor | |
12 | MRF1004MA |
ASI |
NPN SILICON RF POWER TRANSISTOR |