MRF101BN - NXP

MRF101BN RF Power LDMOS Transistors

NXP Semiconductors Technical Data Document Number: MRF101AN Rev. 1, 05/2019 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs MRF101AN MRF101BN These devices are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely .

Features

 Mirror pinout versions (A and B) to simplify use in a push--pull, two--up configuration
 Characterized from 30 to 50 V
 Suitable for linear application
 Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation
 Included in NXP product longevity program with assured supply for a minimum of 15 years after launch Typical Applications
 Industrial, scientific, medical (ISM)
 Radio and VHF TV broadcast
  – Laser generation
  – Plasma etching
  – Particle accelerators
 HF and VHF communications
 Switch mode power supplies
  – MRI and other medi.