NXP Semiconductors Technical Data Document Number: MRF101AN Rev. 1, 05/2019 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs MRF101AN MRF101BN These devices are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely .
Mirror pinout versions (A and B) to simplify use in a push--pull, two--up configuration
Characterized from 30 to 50 V
Suitable for linear application
Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation
Included in NXP product longevity program with assured supply for a minimum of 15 years after launch
Typical Applications
Industrial, scientific, medical (ISM)
Radio and VHF TV broadcast
– Laser generation
– Plasma etching
– Particle accelerators
HF and VHF communications
Switch mode power supplies
– MRI and other medi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MRF10120 |
Tyco |
MICROWAVE POWER TRANSISTORS | |
2 | MRF10120 |
Motorola |
MICROWAVE POWER TRANSISTORS | |
3 | MRF10150 |
Tyco |
MICROWAVE POWER TRANSISTORS | |
4 | MRF10150 |
Motorola |
MICROWAVE POWER TRANSISTORS | |
5 | MRF1015Mx |
Motorola |
MICROWAVE POWER TRANSISTORS | |
6 | MRF101BN |
NXP |
RF Power LDMOS Transistors | |
7 | MRF10005 |
Tyco |
The RF Line Microwave Power Transistor | |
8 | MRF10005 |
Motorola |
MICROWAVE POWER TRANSISTOR | |
9 | MRF1000MB |
Tyco |
Microwave Pulse Power Transistors | |
10 | MRF1001A |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
11 | MRF1002 |
Motorola |
MICROWAVE POWER TRANSISTOR | |
12 | MRF10031 |
Motorola |
MICROWAVE POWER TRANSISTOR |