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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10150/D Microwave Pulse Power Transistor . . . designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak Gain = 9.5 dB Min, 10.0 dB (Typ) • 100% Tested for Lo.
e Range Junction Temperature Symbol VCES VCBO VEBO IC PD Tstg TJ Value 65 65 3.5 14 700 4.0
– 65 to + 200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.25 Unit °C/W
NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value measur.
MRF10150 - Tyco
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10150/D The RF Line Microwave Pulse Power Transistor . . . des.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF1015Mx |
Motorola |
MICROWAVE POWER TRANSISTORS |
|
| 2 | MRF10120 |
Tyco |
MICROWAVE POWER TRANSISTORS |
|
| 3 | MRF10120 |
Motorola |
MICROWAVE POWER TRANSISTORS |
|
| 4 | MRF101AN |
NXP |
RF Power LDMOS Transistors |
|
| 5 | MRF101BN |
NXP |
RF Power LDMOS Transistors |
|
| 6 | MRF10005 |
Tyco |
The RF Line Microwave Power Transistor |
|
| 7 | MRF10005 |
Motorola |
MICROWAVE POWER TRANSISTOR |
|
| 8 | MRF1000MB |
Tyco |
Microwave Pulse Power Transistors |
|
| 9 | MRF1001A |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 10 | MRF1002 |
Motorola |
MICROWAVE POWER TRANSISTOR |
|
| 11 | MRF10031 |
Motorola |
MICROWAVE POWER TRANSISTOR |
|
| 12 | MRF10031 |
MACOM |
Microwave Power Silicon NPN Transistor |
|