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SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10120/D The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ) • 100% Tested for Load Mi.
55 55 3.5 15 380 2.17
–65 to +200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.46 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector
–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) Collector
–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) Emitter
–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 36 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO ICBO 55 55 3.5 — — — — — — — — 25 Vdc Vdc Vdc .
MRF10120 - Motorola
MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10120/D Microwave Long Pulse Power Transi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF10150 |
Tyco |
MICROWAVE POWER TRANSISTORS |
|
| 2 | MRF10150 |
Motorola |
MICROWAVE POWER TRANSISTORS |
|
| 3 | MRF1015Mx |
Motorola |
MICROWAVE POWER TRANSISTORS |
|
| 4 | MRF101AN |
NXP |
RF Power LDMOS Transistors |
|
| 5 | MRF101BN |
NXP |
RF Power LDMOS Transistors |
|
| 6 | MRF10005 |
Tyco |
The RF Line Microwave Power Transistor |
|
| 7 | MRF10005 |
Motorola |
MICROWAVE POWER TRANSISTOR |
|
| 8 | MRF1000MB |
Tyco |
Microwave Pulse Power Transistors |
|
| 9 | MRF1001A |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 10 | MRF1002 |
Motorola |
MICROWAVE POWER TRANSISTOR |
|
| 11 | MRF10031 |
Motorola |
MICROWAVE POWER TRANSISTOR |
|
| 12 | MRF10031 |
MACOM |
Microwave Power Silicon NPN Transistor |
|