MOD500B - TEMIC

MOD500B N-Channel MOSFET

TEMIC Siliconix MODSOOB/SOOC Four N-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) 500 rDS(on) (Q) 0.43 ID(A) 13 D D D S S Leadform Options G G G G MOD500B . . Bent Down MOD500C . .. Bent Up G~ S S D D S N-Channel MOSFET = Absolute Maximum Ratings (Tc 25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Vo.

Features

0B/500C Siliconix Specifications (TJ = 25°C Unless Otherwise Noted) Parameter Symbol Test Condition Min Static Drain-Source Breakdown Voltage V(BR)DSS Vos = ov, In = 250 f1A 500 Gate Threshold Voltage VOS(tb) Vns = Vos, In = 250 mA 2.0 Gate-Body Leakage loss Vns = OV,Vos = ±20V Zero Gate Voltage Drain Current Vns = 500 V, Vos = OV Inss Vns = 400 V, Vos = Ov, TJ = 12S
·C On-State Drain Current' In(on) Vns - 10 V, Vos - 10 V 13 Drain-Source On-State Resistancea rns(on) Vos = 10 V, In = 7 A Vos = 10 V, In = 7 A, TJ = 12S
·C Forward 1tansconductance' gf. Vns = 15 V, In .