MOD200C - TEMIC

MOD200C N-Channel MOSFET

TEMIC Siliconix MOD200B/200C Four N-Channel Enhancement-Mode Thansistors Product Summary V(BR)DSS (V) 200 rDS(on) (Q) 0.11 ID (A) 21 D D D S S Lcnclform Options G G G G MOD200B . .. Bent Down MOD200C . " Bent Up Go---I S S D D S N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Sou.

Features

C MOD200B/200C = Specifications (TJ 25°C Unless Otherwise Noted) Parameter Symbol Test Condition Min Static Drain-Source Breakdown Voltage V(BR)DSS Vos = Ov, 10 = 250 JlA 200 Gate Threshold Voltage VOS(th) Vos - Vos. 10 - 250 rnA 2.0 Gate-Body Leakage loss Vos=OV,Vos= ±20V Zero Gate Voltage Drain Current Vos -160V, Vos - OV loss Vos = 160 V, Vos = 0 V, TJ = 125'C On-State Drain Current' IO(on) Vos = 10 V, Vos = 10V 21 Drain-Source On-State Resistance"