MOD500B |
Part Number | MOD500B |
Manufacturer | TEMIC |
Description | TEMIC Siliconix MODSOOB/SOOC Four N-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) 500 rDS(on) (Q) 0.43 ID(A) 13 D D D S S Leadform Options G G G G MOD500B . . Bent... |
Features |
0B/500C
Siliconix
Specifications (TJ = 25°C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min
Static
Drain-Source Breakdown Voltage
V(BR)DSS
Vos = ov, In = 250 f1A
500
Gate Threshold Voltage
VOS(tb)
Vns = Vos, In = 250 mA
2.0
Gate-Body Leakage
loss
Vns = OV,Vos = ±20V
Zero Gate Voltage Drain Current
Vns = 500 V, Vos = OV Inss
Vns = 400 V, Vos = Ov, TJ = 12S ·C On-State Drain Current' In(on) Vns - 10 V, Vos - 10 V 13 Drain-Source On-State Resistancea rns(on) Vos = 10 V, In = 7 A Vos = 10 V, In = 7 A, TJ = 12S ·C Forward 1tansconductance' gf. Vns = 15 V, In ... |
Document |
MOD500B Data Sheet
PDF 207.69KB |
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