MOD100C - TEMIC

MOD100C N-Channel MOSFET

TEMIC Siliconix MODIOOB/IOOC Four N-Channel Enhancement-Mode Thansistors Product Summary V(BR)DSS (V) 100 rDS(on) (9) 0.08 ID (A) 21 D D D S S Leadform Options G G G G MOD100B . .. Bent Down MODlOOC . .. Bent Up S S D D S N-Channel MOSFET = Absolute Maximum Ratings (Tc 25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Vol.

Features

t 0C;W 6-53 TEMIC MODIOOB/IOOC Specifications (TJ = 25°C Unless Otherwise Noted) Siliconix Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Symbol V(BR)DSS VOS(th) loss ZeIO Gate Voltage Drain CUrrent On-State Drain Current" IDSS ID(on) Drain-Source On-State Resistance" 'OS(on) Forward 1tansconductance" gr, Dynamic: Input Capacitance Output Capacitance Reverse 1tansfer Capacitance 1btal Gate Charge Gate-Source Charge Gate-Drain Charge Thrn-On Delay TIme Ris.eTIme Thrn-Off Delay TIme FaIl TIme c... Co.. Cr., Qg Qgs Qgd td(on) tf td(off) tf .