MOD400B - TEMIC

MOD400B N-Channel MOSFET

TEMIC Siliconix MOD400B/400C Four N-Channel Enhancement-Mode lransistors Product Summary V(BR)OSS (V) 400 rOS(on) (Q) 0.35 10 (A) 15 D D D S S Leadform Options G G G G MOD400B . .. Bent Down MOD400C . .. Bent Up Go-l S S D D S N-Channel MOSFET = Absolute Maximum Ratings (Tc 25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Sourc.

Features

0.31 Unit 'CfW 6-61 TEMIC MOD400B/400C = Specifications (TJ 25°C Unless Otherwise Noted) Parameter Symbol Test Condition Min Static Drain-Source Breakdown Voltage V(BR)DSS VGS = OV; 10 = 250 !lA 400 Gate Threshold Voltage VGS(tb) Vos = VGS. 10 = 250 rnA 2.0 Gate-Body Leakage IGSS VOS= OV;VGS= ±20V Zero Gate Voltage Drain Current Vos = 320V;VGS = OV loss Vos = 320 V; VGS = 0 V; TJ = 12S'C On-State Drain Current' lo(on) Vos = 10 V; VGS = lOV 15 Drain-Source On-State Resistance' roS(on) VGs=10 V;Io=8A VGS = 10 V; 10 = 8 A, TJ = 125'C Forward 1I'ansconductance' Sf. .