MMVL3700T1 - LRC

MMVL3700T1 High Voltage Silicon Pin Diode

www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. High Voltage Silicon Pin Diode These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic surface mount package for economical, high–volume consumer and industrial requirements. • Lo.

Features

Ambient Junction and Storage Temperature Value 200 20 Max 200 1.57 635 150 Unit Vdc mAdc Unit mW mW/°C °C/W °C THERMAL CHARACTERISTICS RθJA TJ, Tstg
*FR
  –4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse BreakdownVoltage (I R = 10 µAdc) Diode Capacitance (VR = 20 Vdc, f = 1.0 MHz) Series Resistance (IF = 10 mAdc) Reverse Leakage Current (VR = 150 Vdc) Reverse Recovery Time (IF = IR = 10 mAdc) Symbol V(BR)R CT RS IR trr Min 200 — — — — Typ — — 0.7 — 300 Max — 1.0 1.0 0.1 — Unit Vdc pF Ω µAdc ns MMVL3700T1
  –1/2 LESHAN RADIO COMPANY, LTD. MMVL.