MMBTSB624 - SEMTECH ELECTRONICS

MMBTSB624 NPN Transistor

MMBTSB624 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups A, B, C, D and E, according to its DC current gain. www.DataSheet4U.com SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Volta.

Features

Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 700 mA, -IB = 70 mA Base Emitter On Voltage at -VCE = 6 V , -IC = 10 mA Output Capacitance at -VCB = 6 V, IE = 0, f = 1 MHz Transition Frequency at -VCE = 6 V, -IC = 10 mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/11/2007 MMBTSB624 www.DataS.