MMBTSA1298W - SEMTECH ELECTRONICS

MMBTSA1298W NPN Transistor

MMBTSA1298W PNP Silicon Epitaxial Planar Transistor for low frequency power amplifier and power switching applications The transistor is subdivided into two groups, O and Y according to its DC current gain. www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Cur.

Features

C = 10 mA Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Current Gain Group O Y Symbol hFE hFE hFE -ICBO -IEBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE fT Cob Min. 100 160 40 30 5 0.5 Typ. 120 13 Max. 200 320 100 100 0.4 0.8 Unit nA nA V V V V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/06/2007 MMBTSA1298W www.DataSheet4U.com I C - VCE COMMON EMITTER o -5 Ta=25 C DC CURRENT GAIN h FE h FE - I C 1000 500 300 100 50 30 10 -1 -3 -10 -30 -100 -300 -1000 COMMON EMITTE.