MMBTSA1365 - SEMTECH ELECTRONICS

MMBTSA1365 NPN Transistor

MMBTSA1365 PNP Silicon Epitaxial Planar Transistor for high current drive application The transistor is subdivided into three groups E, F and G according to its DC current gain. www.DataSheet4U.com SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current .

Features

Base Breakdown Voltage at -IE = 10 µA Collector Saturation Voltage at -IC = 500 mA, -IB = 25 mA Transition Frequency at -VCE = 6 V, IE = 10 mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 06/12/2006 MMBTSA1365 www.DataSheet4U.com Power Dissipation vs Ambient Temperature 300 Power Dissipation: Ptot (mW) 250 200 150 100 50 0 0 25 50 75 100 O 125 150 Ambient Temperature: Ta ( C) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company.