MMBTSA1298 - SEMTECH ELECTRONICS

MMBTSA1298 NPN Transistor

MMBTSA1298 PNP Silicon Epitaxial Planar Transistor for low frequency power amplifier and power switching applications The transistor is subdivided into two groups, O and Y according to its DC current gain. www.DataSheet4U.com SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base.

Features

VCE = 5 V, -IC = 10 mA Collector Output Capacitance at -VCB = 10 V, f = 1 MHz O Y Symbol hFE hFE hFE -ICBO -IEBO -VCE(sat) -VBE -V(BR)CEO -V(BR)EBO fT Cob Min. 100 160 40 0.5 25 5 Typ. 120 13 Max. 200 320 0.1 0.1 0.4 0.8 Unit µA µA V V V V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 18/04/2006 MMBTSA1298 www.DataSheet4U.com I C - VCE COMMON EMITTER o -5 Ta=25 C DC CURRENT GAIN h FE h FE - I C 1000 500 300 100 50 30 10 -1 -3 -10 -30 -100 -300 -1000 COMMON EMITTER VCE=-.