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MMBTSA1015 - SEMTECH ELECTRONICS

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MMBTSA1015 PNP Transistor

MMBTSA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. www.DataSheet4U.com The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector.

Features

µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Gain Bandwidth Product at -VCE = 10 V, -IC = 1 mA Output Capacitance at -VCB = 10 V, f = 1 MHz Symbol hFE hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(sat) fT COB Min. 70 120 200 25 50 50 5 80 - Max. 140 240 400 0.1 0.1 0.3 1.1 7 Unit µA µA V V V V V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/12/2007 MMBTSA1015.

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