·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·DC Current Gain- : hFE = -100(Min) @ IC= -50mA ·Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= -50mA ·Complement to the NPN MJE340 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose a.
AL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1.0mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1.0mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1.0mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA ICBO Collector Cutoff Current VCB= -300V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE DC Current Gain IC= -50m A ; VCE= -10V MJE350 MIN MAX UNIT -300 V -300 V -3 V -1.0 V -0.1 mA -0.1 mA 30 240 NOTICE: ISC reserves the rights.
MJE350 MJE350 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Trans.
Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @.
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at .
The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is .
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE350/D Plastic Medium Power PNP Silicon Transistor . ..
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .
TO-126F PNP 。Silicon PNP transistor in a TO-126F Plastic Package. / Features VCEO, MJE340 . High Collector-Emit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MJE350G |
ON Semiconductor |
Plastic Medium-Power PNP Silicon Transistor | |
2 | MJE3055 |
DIGITRON |
NPN SILICON POWER TRANSISTOR | |
3 | MJE3055 |
INCHANGE |
NPN Transistor | |
4 | MJE3055 |
Fairchild |
NPN Silicon Transistor | |
5 | MJE3055 |
ST Microelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
6 | MJE3055 |
ON |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
7 | MJE3055 |
GME |
Plastic-Encapsulate Transistors | |
8 | MJE3055 |
Motorola |
(MJE2955 / MJE3055) POWER TRANSISTORS | |
9 | MJE3055 |
JIANGSU CHANGJIANG ELECTRONICS |
NPN Transistor | |
10 | MJE3055A |
nELL |
Complementary Silicon power transistors | |
11 | MJE3055AT |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
12 | MJE3055T |
ON Semiconductor |
Complementary Silicon Plastic Power Transistors |