MJE350G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • • • • • High Collector−Emitter Sustaining Voltage Excellent DC Current Gain Plastic Thermopadt Package Complement to MJ.
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High Collector−Emitter Sustaining Voltage Excellent DC Current Gain Plastic Thermopadt Package Complement to MJE340 These Devices are Pb−Free and are RoHS Compliant
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0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS, 20 WATTS
COLLECTOR 2, 4
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range Symbol VCEO VEB IC PD 20 0.16 TJ, Tstg
–65 to +150 W mW/_C _C Value 300 3.0 500 Unit Vdc Vdc mAdc 3 BASE
1 EMITTER
Stresses exceeding those.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MJE350 |
Multicomp |
Medium Power PNP Transistors | |
2 | MJE350 |
Motorola |
0.5 AMPERE POWER TRANSISTOR | |
3 | MJE350 |
Fairchild |
PNP Epitaxial Silicon Transistor | |
4 | MJE350 |
ST Microelectronics |
COMPLEMETARY SILICON POWER TRANSISTORS | |
5 | MJE350 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
6 | MJE350 |
Central Semiconductor |
POWER TRANSISTOR | |
7 | MJE350 |
CDIL |
PNP EPITAXIAL SILICON POWER TRANSISTOR | |
8 | MJE350 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
9 | MJE3055 |
DIGITRON |
NPN SILICON POWER TRANSISTOR | |
10 | MJE3055 |
INCHANGE |
NPN Transistor | |
11 | MJE3055 |
Fairchild |
NPN Silicon Transistor | |
12 | MJE3055 |
ST Microelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS |