MJE350 Fairchild PNP Epitaxial Silicon Transistor Datasheet, en stock, prix

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MJE350

Fairchild
MJE350
MJE350 MJE350
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Part Number MJE350
Manufacturer Fairchild
Description MJE350 MJE350 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to MJE340 1 TO-126 2.Collector 3.Base 1. Emitter ..PNP E...
Features s VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 VCE = 10V IC = 10IB hFE, DC CURRENT GAIN 100 -1 VBE(sat) VCE(sat) -0.1 10 1 -1 -10 -100 -1000 -0.01 -1 -10 -100 -1000 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10000 25 IC[A], COLLECTOR CURRENT -1000 PC[W], POWER DISSIPATION 20 15 10 0µ s 50 0µ s 1m DC 10 s -100 5 -10 -10 0 -100 -1000 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 3. Safe Ope...

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