MJE350 Inchange Semiconductor Silicon PNP Power Transistor Datasheet, en stock, prix

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MJE350

Inchange Semiconductor
MJE350
MJE350 MJE350
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Part Number MJE350
Manufacturer Inchange Semiconductor
Description ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·DC Current Gain- : hFE = -100(Min) @ IC= -50mA ·Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= -50mA ·Complement to t...
Features AL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1.0mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1.0mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1.0mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA ICBO Collector Cutoff Current VCB= -300V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE DC Current Gain IC= -50m A ; VCE= -10V MJE350 MIN MAX UNIT -300 V -300 V -3 V -1.0 V -0.1 mA -0.1 mA 30 240 NOTICE: ISC reserves the rights...

Document Datasheet MJE350 Data Sheet
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