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The MJE3055A is a silicon epitaxial-base planar NPN transistor in TO-220AB package. lt is intended for use in general-purpose amplifier and switding applications. The complementary PNP type is MJE2955A. 12 3 TO-220AB INTERNAL SCHEMATIC DIAGRAM C (2) (1) B (3) E MJE3055A(NPN) C (2) (1) B (3) E MJE2955A(PNP) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless oth.
Designed for general-purpose switching and amplifier applications. DC current gain specified to 10A High current gain-Band width product: fT = 2 MHz (Min.) @ lC = 0.5 Adc Excellent safe operating area DESCRIPTION The MJE3055A is a silicon epitaxial-base planar NPN transistor in TO-220AB package. lt is intended for use in general-purpose amplifier and switding applications. The complementary PNP type is MJE2955A. 12 3 TO-220AB INTERNAL SCHEMATIC DIAGRAM C (2) (1) B (3) E MJE3055A(NPN) C (2) (1) B (3) E MJE2955A(PNP) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJE3055 |
DIGITRON |
NPN SILICON POWER TRANSISTOR |
|
| 2 | MJE3055 |
INCHANGE |
NPN Transistor |
|
| 3 | MJE3055 |
Fairchild |
NPN Silicon Transistor |
|
| 4 | MJE3055 |
ST Microelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 5 | MJE3055 |
ON |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 6 | MJE3055 |
GME |
Plastic-Encapsulate Transistors |
|
| 7 | MJE3055 |
Motorola |
(MJE2955 / MJE3055) POWER TRANSISTORS |
|
| 8 | MJE3055 |
JIANGSU CHANGJIANG ELECTRONICS |
NPN Transistor |
|
| 9 | MJE3055AT |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | MJE3055T |
ON Semiconductor |
Complementary Silicon Plastic Power Transistors |
|
| 11 | MJE3055T |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 12 | MJE3055T |
INCHANGE |
NPN Transistor |
|