I (MIP022X) IPD I G( 12 V/3 A : 100 VAC 0.3 W : 100 VAC G IPD (MIP022X) MIP022X G IPD IPD PWM 60 W : 1/20) ; 70 mW, ; 70 , 264 VAC 264 VAC ; 130 mW ; 60 IPD I MIP2E1D MIP2E2D MIP2E3D MIP2E4D MIP2E5D MIP2E7D ∼7W ∼ 10 W 10 W ∼ 20 W 15 W ∼ 30 W 20 W ∼ 40 W 40 W ∼ 60 W VDSS 700 V MOS FET ILIMIT fOSC 0.4 A 0.5 A 1.0 A 1.5 A TO-220-A1/ .
0
( 12 V/3 A
η vs PO
MIP2E5D MIP2E5D MIP0225 ( MIP0225 (
100 V 264 V ) 100 V ) 264 V
5 10 15 20 25 30 35 40 PO (W)
)
3 2.5
2 1.5
1 0.5
0 0
0.5
Pin vs PO
MIP2E5D MIP2E5D MIP0225 ( MIP0225 (
100 V 264 V ) 100 V ) 264 V
1 1.5 2 2.5 3 PO (W)
100 VAC
0.3 W 30 W
264 VAC
0.3 W 30 W
I ( : mm)
• DIP8-A1(CF)
9.4±0.3
87
5
0.25+
–00..1005
MIP2E5D 69.8 83.1 60.0 84.3
(%) MIP0225(
42.9 83.8 24.6 84.0
MIP2E5D 0.07 0.43 36.1 0.12 0.5 35.6
(W) MIP0225(
0.35 0.7 35.8 1.08 1.22 35.7
• TO-220-A1
10.5±0.5 9.5±0.2 8.0±0.2
4.5±0.2 1.4±0.1
2.8±0.2 1.5±0.2
6.7±0.3 2.8±0.2
15.4±0.3
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MIP2E3DMS |
Panasonic |
Silicon MOS-type integrated circuit | |
2 | MIP2E3DMU |
Panasonic |
Silicon MOSFET | |
3 | MIP2E3DMY |
Panasonic |
Silicon MOSFET | |
4 | MIP2E1D |
Matsushita |
High-Performance IPD for Battery Chaegers | |
5 | MIP2E1DMC |
Panasonic |
IPD | |
6 | MIP2E1DMS |
Panasonic |
Silicon MOS-type integrated circuit | |
7 | MIP2E1DMTSCF |
Panasonic |
Silicon MOSFET | |
8 | MIP2E1DMU |
Panasonic |
Silicon MOS-type integrated circuit | |
9 | MIP2E2D |
Matsushita |
High-Performance IPD for Battery Chaegers | |
10 | MIP2E2DMU |
Panasonic |
IPD | |
11 | MIP2E2DMY |
Panasonic |
Silicon MOSFET | |
12 | MIP2E4D |
Matsushita |
High-Performance IPD |