MIP2E2DMY MOS (IPD) ■ • • ■ • ■ Ta = 25°C ± 3°C VD 700 V VC 10 V ID 0.585 A IDP 0.82 A IC 0.1 A Tch 150 °C Tstg −55 ∼ +150 °C ■ • TO-220-A2 • 1: Control 2: Source 3: Drain ■ : MIP2E2DMY ■ Control 1 Max Duty Clock Sawtooth SQ RQ SQ V-I R Q : 2010 3 SLB00041BJD 3 Drain MOSFET 2 Source 1 MIP2E2DMY ■ TC = 25°C ± 2°C PWM / ) *: * * fOSC MAXD.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MIP2E2DMU |
Panasonic |
IPD | |
2 | MIP2E2D |
Matsushita |
High-Performance IPD for Battery Chaegers | |
3 | MIP2E1D |
Matsushita |
High-Performance IPD for Battery Chaegers | |
4 | MIP2E1DMC |
Panasonic |
IPD | |
5 | MIP2E1DMS |
Panasonic |
Silicon MOS-type integrated circuit | |
6 | MIP2E1DMTSCF |
Panasonic |
Silicon MOSFET | |
7 | MIP2E1DMU |
Panasonic |
Silicon MOS-type integrated circuit | |
8 | MIP2E3D |
Matsushita |
High-Performance IPD for Battery Chaegers | |
9 | MIP2E3DMS |
Panasonic |
Silicon MOS-type integrated circuit | |
10 | MIP2E3DMU |
Panasonic |
Silicon MOSFET | |
11 | MIP2E3DMY |
Panasonic |
Silicon MOSFET | |
12 | MIP2E4D |
Matsushita |
High-Performance IPD |