(IPD) MIP2E1DMC ( MOS I • • ) Unit : mm (1.4) 10.5±0.3 4.6±0.2 1.4±0.1 3.0±0.5 0 to 0.5 1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2 I Ta = 25°C ± 3°C VD VC ID IDP IC Tch Tstg 700 10 0.43 0.61 0.1 150 −55 ∼ +150 V V A A A °C °C 0 to 0.3 (10.2) (8.9) 1 2 3 1 : Control 2 : Source 3 : Drain (2.1) (6.4) (1.4) TO-220C-G1 Package : MIP2E1DMC http://www.DataSheet.
MIT 36
0.335
http://www.DataSheet4U.net/
0.375 0.25 0.1
0.415
A µs µs °C
*
*
*
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ton(BLK) td(OCL) TOTP VC reset RDS(ON) IDSS VDSS tr tf
*
*
130 2.3 ID = 0.05 A VDS = 650 V, VC = 6.5 V ID = 0.25 mA, VC = 6.5 V 700
140 3.3 4.2
V Ω µA V µs µs °C/W °C/W
23 10
27 250
0.1 0.1 3.0 70
Rth(ch-c) Rth(ch-a)
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2
SLB00034AJD
datasheet pdf - http://www.DataSheet4U.net/
(1) (2) (3) — ( )
— (4)
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(5)
(6) ) (7)
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IPD
(1) (2) Power Integrations ( ) IPD (3) (4) ( ) (1), (2) IPD (3) MIP501~MIP515, MIP704~MIP709 IPD
http://www.DataSheet4U.net/
(
) IPD
IPD
MIP805
IPD
MIP13
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MIP2E1DMS |
Panasonic |
Silicon MOS-type integrated circuit | |
2 | MIP2E1DMTSCF |
Panasonic |
Silicon MOSFET | |
3 | MIP2E1DMU |
Panasonic |
Silicon MOS-type integrated circuit | |
4 | MIP2E1D |
Matsushita |
High-Performance IPD for Battery Chaegers | |
5 | MIP2E2D |
Matsushita |
High-Performance IPD for Battery Chaegers | |
6 | MIP2E2DMU |
Panasonic |
IPD | |
7 | MIP2E2DMY |
Panasonic |
Silicon MOSFET | |
8 | MIP2E3D |
Matsushita |
High-Performance IPD for Battery Chaegers | |
9 | MIP2E3DMS |
Panasonic |
Silicon MOS-type integrated circuit | |
10 | MIP2E3DMU |
Panasonic |
Silicon MOSFET | |
11 | MIP2E3DMY |
Panasonic |
Silicon MOSFET | |
12 | MIP2E4D |
Matsushita |
High-Performance IPD |