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ME2301A-G |
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| Part Number | ME2301A-G |
| Manufacturer | Matsuki |
| Description | The ME2301A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to min... |
| Features |
● RDS(ON) ≦75mΩ@VGS=-4.5V ● RDS(ON) ≦95mΩ@VGS=-2.5V ● RDS(ON) ≦130mΩ@VGS=-1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC (SOT-23) Top View * The Ordering Information: ME2301A (Pb-... |
| Document |
 ME2301A-G Data Sheet
PDF 928.32KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | ME2301A |
Matsuki |
P-Channel 20V (D-S) MOSFET |
|
| 2 | ME2301 |
Matsuki |
P-Channel Enhancement Mode Mosfet |
|
| 3 | ME2301-G |
Matsuki |
P-Channel Enhancement Mode Mosfet |
|
| 4 | ME2301DC |
Matsuki |
P-Channel 20V (D-S) MOSFET |
|
| 5 | ME2301DC-G |
Matsuki |
P-Channel 20V (D-S) MOSFET |
|