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The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R4002A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R4002A can be u.
• Bit configuration
: 262,144 words × 16 bits
• LB and UB data byte control
• Read/write endurance
: 1010 times / byte
• Data retention
: 10 years ( + 55 °C), 55 years ( + 35 °C)
• Operating power supply voltage
: 3.0 V to 3.6 V
• L.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MB85R4001A |
Fujitsu |
Memory FRAM |
|
| 2 | MB85R4M2T |
Fujitsu |
Memory FRAM |
|
| 3 | MB85R1001 |
Fujitsu Media Devices |
1 M Bit (128 K X 8) |
|
| 4 | MB85R1001A |
Fujitsu |
1 M Bit (128 K x 8) |
|
| 5 | MB85R1002 |
Fujitsu Media Devices |
Memory FRAM |
|
| 6 | MB85R1002A |
Fujitsu |
1 M Bit (64 K x 16) |
|
| 7 | MB85R2001 |
Fujitsu |
Memory FRAM CMOS |
|
| 8 | MB85R2002 |
Fujitsu |
Memory FRAM CMOS |
|
| 9 | MB85R256 |
Fuji Electric |
Memory FRAM |
|
| 10 | MB85R256F |
Fujitsu |
Memory FRAM |
|
| 11 | MB85R256H |
Fujitsu Media Devices |
Memory FRAM CMOS 256 K (32 K X 8) Bit |
|
| 12 | MB85RC04V |
Fujitsu |
4K (512 x 8) Bit I2C |
|