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The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R256.
• Bit configuration : 32,768 words × 8 bits
• High endurance 10 Billion Read/writes
• Peripheral circuit CMOS construction
• Operating power supply voltage : 2.7 V to 3.6 V
• Operating temperature range : −40 °C to +85 °C
• Data re.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MB85R256 |
Fuji Electric |
Memory FRAM |
|
| 2 | MB85R256H |
Fujitsu Media Devices |
Memory FRAM CMOS 256 K (32 K X 8) Bit |
|
| 3 | MB85R2001 |
Fujitsu |
Memory FRAM CMOS |
|
| 4 | MB85R2002 |
Fujitsu |
Memory FRAM CMOS |
|
| 5 | MB85R1001 |
Fujitsu Media Devices |
1 M Bit (128 K X 8) |
|
| 6 | MB85R1001A |
Fujitsu |
1 M Bit (128 K x 8) |
|
| 7 | MB85R1002 |
Fujitsu Media Devices |
Memory FRAM |
|
| 8 | MB85R1002A |
Fujitsu |
1 M Bit (64 K x 16) |
|
| 9 | MB85R4001A |
Fujitsu |
Memory FRAM |
|
| 10 | MB85R4002A |
Fujitsu |
Memory FRAM |
|
| 11 | MB85R4M2T |
Fujitsu |
Memory FRAM |
|
| 12 | MB85RC04V |
Fujitsu |
4K (512 x 8) Bit I2C |
|