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The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies. The MB85R2002 is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R2002 can be used f.
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• Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention LB and UB data byte control Package : 131,072 words × 16 bits : 1010 times/bit : 3.0 V to 3.6 V : −40 °C to +85 °C : 10 years (+55 °C) : 48-pin plastic TSOP (1)
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Free Datasheet http://www.datasheet4u.com/
MB85R2002
■ PIN ASSIGNMENT
(TOP VIEW)
A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE CE2 GND UB LB VCC NC A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 4.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MB85R2001 |
Fujitsu |
Memory FRAM CMOS |
|
| 2 | MB85R256 |
Fuji Electric |
Memory FRAM |
|
| 3 | MB85R256F |
Fujitsu |
Memory FRAM |
|
| 4 | MB85R256H |
Fujitsu Media Devices |
Memory FRAM CMOS 256 K (32 K X 8) Bit |
|
| 5 | MB85R1001 |
Fujitsu Media Devices |
1 M Bit (128 K X 8) |
|
| 6 | MB85R1001A |
Fujitsu |
1 M Bit (128 K x 8) |
|
| 7 | MB85R1002 |
Fujitsu Media Devices |
Memory FRAM |
|
| 8 | MB85R1002A |
Fujitsu |
1 M Bit (64 K x 16) |
|
| 9 | MB85R4001A |
Fujitsu |
Memory FRAM |
|
| 10 | MB85R4002A |
Fujitsu |
Memory FRAM |
|
| 11 | MB85R4M2T |
Fujitsu |
Memory FRAM |
|
| 12 | MB85RC04V |
Fujitsu |
4K (512 x 8) Bit I2C |
|