The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words × 16 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process technologies. The MB85R1002A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R1002A can be used .
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• Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention LB and UB data byte control Package : 65,536 words × 16 bits : 1010 times : 3.0 V to 3.6 V : − 40 °C to + 85 °C : 10 years ( + 55 °C) : 48-pin plastic TSOP (1)
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MB85R1002A
■ PIN ASSIGNMENTS
(TOP VIEW)
A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE CE2 VSS UB LB VDD NC A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MB85R1002 |
Fujitsu Media Devices |
Memory FRAM | |
2 | MB85R1001 |
Fujitsu Media Devices |
1 M Bit (128 K X 8) | |
3 | MB85R1001A |
Fujitsu |
1 M Bit (128 K x 8) | |
4 | MB85R2001 |
Fujitsu |
Memory FRAM CMOS | |
5 | MB85R2002 |
Fujitsu |
Memory FRAM CMOS | |
6 | MB85R256 |
Fuji Electric |
Memory FRAM | |
7 | MB85R256F |
Fujitsu |
Memory FRAM | |
8 | MB85R256H |
Fujitsu Media Devices |
Memory FRAM CMOS 256 K (32 K X 8) Bit | |
9 | MB85R4001A |
Fujitsu |
Memory FRAM | |
10 | MB85R4002A |
Fujitsu |
Memory FRAM | |
11 | MB85R4M2T |
Fujitsu |
Memory FRAM | |
12 | MB85RC04V |
Fujitsu |
4K (512 x 8) Bit I2C |