The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, MB85R256H is able to retain data without back-up battery. The memory cells used for the MB85R256H has improved at lea.
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• Bit configuration: 32,768 words x 8 bits Read/write durability: 1010 times/bit (Min) Peripheral circuit CMOS construction Operating power supply voltage: 2.7 V to 3.6 V Operating temperature range: −40 °C to +85 °C 28-pin, SOP flat package 28-pin, TSOP(1) flat package
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MB85R256H
■ PIN ASSIGNMENTS
(TOP VIEW)
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
VCC WE A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MB85R256 |
Fuji Electric |
Memory FRAM | |
2 | MB85R256F |
Fujitsu |
Memory FRAM | |
3 | MB85R2001 |
Fujitsu |
Memory FRAM CMOS | |
4 | MB85R2002 |
Fujitsu |
Memory FRAM CMOS | |
5 | MB85R1001 |
Fujitsu Media Devices |
1 M Bit (128 K X 8) | |
6 | MB85R1001A |
Fujitsu |
1 M Bit (128 K x 8) | |
7 | MB85R1002 |
Fujitsu Media Devices |
Memory FRAM | |
8 | MB85R1002A |
Fujitsu |
1 M Bit (64 K x 16) | |
9 | MB85R4001A |
Fujitsu |
Memory FRAM | |
10 | MB85R4002A |
Fujitsu |
Memory FRAM | |
11 | MB85R4M2T |
Fujitsu |
Memory FRAM | |
12 | MB85RC04V |
Fujitsu |
4K (512 x 8) Bit I2C |