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October 1989 Edition 1.0 DATA SHEET MB81C79B-351-45 CMOS 72K-BIT HIGH-SPEED SRAM OJ FUJITSU 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C79B is a 8,192 words x 9 bits static random access memory fabricated with CMOS technology. The 9-bit organization of this device is desirable for use in a parity.
5 ns max.
A11, A12 aocesstime -15 ns max. {MB81C79B-45)
• Low power consumption: 550 mW max. (Operation) 138 mW max. (TTL Standby)
83 mW max. (CMOS Standby)
• Single +5 V power supply ±1 0% tolerance
• TTL compatible inputs and outputs
• Three-state inputs and outputs
• Chip select for simplified memory expansion, automatic power down
• Electrostatic protection for all inputs and outputs
• Standard 28-pin Plastic Packages:
Skinny DIP (300 mil) MB81C79B-xxPSK
SOP
(450 mil) MB81C79B-xxPF
Absolute Maximum Ratings (See Note)
Rating
Symbol
Value
UnR
Supply Voltage
Vcc
-{l.5 to +7..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MB81C79A |
Fujitsu |
CMOS 72K-Bit High Speed SRAM |
|
| 2 | MB81C71A |
Fujitsu |
CMOS 64K-Bit High Speed SRAM |
|
| 3 | MB81C74 |
Fujitsu |
CMOS 64K-BIT HIGH-SPEED SRAM |
|
| 4 | MB81C75 |
Fujitsu |
CMOS 64K-BIT HIGH-SPEED SRAM |
|
| 5 | MB81C78A |
Fujitsu |
CMOS 64K-Bit High Speed SRAM |
|
| 6 | MB81C1000A |
Fujitsu |
CMOS 1M x 1 Bit Fast page Mode Dynamic RAM |
|
| 7 | MB81C4251 |
Fujitsu Media Devices |
1M-Bit Dual Port CMOS DRAM |
|
| 8 | MB81C4253 |
Fujitsu Media Devices |
1M-Bit Dual Port CMOS DRAM |
|
| 9 | MB81C4256-10 |
ETC |
CMOS 1M-Bit DRAM |
|
| 10 | MB81C4256A |
Fujitsu Media Devices |
256K x 4-Bit Fast Page Mode Low Power DRAM |
|
| 11 | MB81C51 |
Fujitsu |
CMOS TAG RANDOM ACCESS MEMORY |
|
| 12 | MB81C67 |
Fujitsu |
CMOS 16K-BIT HIGH-SPEED SRAM |
|