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March 1990 Edition 3.0 DATA SHEET MBS1 C74-25/-30/-35 CMOS 64K-BIT HIGH-SPEED SRAM cP FUJITSU 16K Words x 4 Bits High-Speed CMOS Static Random Access Memory The Fujnsu MB81C74 is a 16,384 words x 4 bns static random access memory fabricated wnh a CMOS silicon gate process. The memory uses asynchronous circunry and n may be maintained in any state for a.
olerance
• low power standby:
550 mW max. (Active) 55 mW max. (Standby, CMOS level)
110 mW max. (Standby, TIL level)
• Standard 22-pin Plastic Package:
DIP
MB81C74-xxP
• Standard 22-pad Ceramic Package: lCC (metal seal) MB81C74-xxCV
Absolute Maximum Ratings (See Note)
Rating Supply Voltage Input Volt~e on any pin wnh respect to ND
Symbol
Value
Un"
Vee
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MB81C71A |
Fujitsu |
CMOS 64K-Bit High Speed SRAM |
|
| 2 | MB81C75 |
Fujitsu |
CMOS 64K-BIT HIGH-SPEED SRAM |
|
| 3 | MB81C78A |
Fujitsu |
CMOS 64K-Bit High Speed SRAM |
|
| 4 | MB81C79A |
Fujitsu |
CMOS 72K-Bit High Speed SRAM |
|
| 5 | MB81C79B |
Fujitsu |
CMOS 72K-BIT HIGH-SPEED SRAM |
|
| 6 | MB81C1000A |
Fujitsu |
CMOS 1M x 1 Bit Fast page Mode Dynamic RAM |
|
| 7 | MB81C4251 |
Fujitsu Media Devices |
1M-Bit Dual Port CMOS DRAM |
|
| 8 | MB81C4253 |
Fujitsu Media Devices |
1M-Bit Dual Port CMOS DRAM |
|
| 9 | MB81C4256-10 |
ETC |
CMOS 1M-Bit DRAM |
|
| 10 | MB81C4256A |
Fujitsu Media Devices |
256K x 4-Bit Fast Page Mode Low Power DRAM |
|
| 11 | MB81C51 |
Fujitsu |
CMOS TAG RANDOM ACCESS MEMORY |
|
| 12 | MB81C67 |
Fujitsu |
CMOS 16K-BIT HIGH-SPEED SRAM |
|