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OUTPUTS HIT HCn/RCn HITn/REPn PERR MHIT HIT OUTPUT. "NOR" OF HITO TO HIT3 CODED OUTPUTS OF HIT OR REPLACE INFORMATION ( n = 0 - 1 ) UNCODED OUTPUTS OF HIT OR REPLACE INFORMATION ( n = 0 - 3 ) PARITY ERROR HIT OUTPUT MODIFIED BY MHENBL AND EXTH INPUTS MODE AO-A9 TDO-19 PURGE INVL SBLK SBO, SBI WRITE SET INH H/R RLATCH PINV VINV MHENBL EXTH MODE SELECTIO.
V Input Vo~e on any pin with respect to ND VN --3.0 to +7 V Output VoHage on any pin with respect to GND Voor -Q.5 to +7 V Output Current lour ±20 mA Power Dissipation PD 1.5 W Temperature Under Bies TaN -10 to +85 °C Storage Tempereture Range TSTG ~!ito+125 °C Note: Permanent device damage may ocaJr Habsolulll maximum ratings are exceeded. Functional operation should be rastriclad to !he oondilions as detaIed in Ihe operation sections 01 this data sheat Exposure to absolulll maximum rating conditions lor exIIInded periods may aflect devios re.ability. PGA-64C-A02 (.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MB81C1000A |
Fujitsu |
CMOS 1M x 1 Bit Fast page Mode Dynamic RAM |
|
| 2 | MB81C4251 |
Fujitsu Media Devices |
1M-Bit Dual Port CMOS DRAM |
|
| 3 | MB81C4253 |
Fujitsu Media Devices |
1M-Bit Dual Port CMOS DRAM |
|
| 4 | MB81C4256-10 |
ETC |
CMOS 1M-Bit DRAM |
|
| 5 | MB81C4256A |
Fujitsu Media Devices |
256K x 4-Bit Fast Page Mode Low Power DRAM |
|
| 6 | MB81C67 |
Fujitsu |
CMOS 16K-BIT HIGH-SPEED SRAM |
|
| 7 | MB81C68A |
Fujitsu |
CMOS 16K-BIT HIGH-SPEED SRAM |
|
| 8 | MB81C69A |
Fujitsu |
CMOS 16K-BIT HIGH-SPEED SRAM |
|
| 9 | MB81C71A |
Fujitsu |
CMOS 64K-Bit High Speed SRAM |
|
| 10 | MB81C74 |
Fujitsu |
CMOS 64K-BIT HIGH-SPEED SRAM |
|
| 11 | MB81C75 |
Fujitsu |
CMOS 64K-BIT HIGH-SPEED SRAM |
|
| 12 | MB81C78A |
Fujitsu |
CMOS 64K-Bit High Speed SRAM |
|