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March 1990 Edition 3.0 DATA SHEET FU1hsu MB81 C75-251-301-35 CMOS 64K-BIT HIGH-SPEED SRAM 16K Words x 4 Bits High-Speed CMOS Static Random Access Memory The Fujitsu MB81 C75 is a 16,384 words x 4 bits static random IICC8IIS memory fabricated with a CMOS silicon gate process. The memory uses asynchronous circuitry and it may be maintained in any state fo.
ts and outputs
• Single ..s V power supply ±1 0% tolerance
• Low power standby:
550 mW max. (Active) 55 mW max. (Standby, CMOS leval) 110 mW max. (Standby, TTL level)
• Standard 24-pin Plastic Package:
DIP
MB81C75-xxP
SOJ
MB81C75-xxPJ
• Standard 28-pad Ceramic Package: LCC (matal saal) MB81C75-xxCV
Absolute Maximum Ratings (See Note)
Rating
Symbol
Value
UnH
Supply Voltage
Vee
-<1.5 to +7
V
Input Vo~e on any pin with raspact to NO
V..
-3.5 to +7
V
Output Vo~e on any va pin with
raspact to G 0
Voor
-<1.5 to +7
V
Output Current
louT
±20
mA
Power Dissipation
Po
1.0
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MB81C71A |
Fujitsu |
CMOS 64K-Bit High Speed SRAM |
|
| 2 | MB81C74 |
Fujitsu |
CMOS 64K-BIT HIGH-SPEED SRAM |
|
| 3 | MB81C78A |
Fujitsu |
CMOS 64K-Bit High Speed SRAM |
|
| 4 | MB81C79A |
Fujitsu |
CMOS 72K-Bit High Speed SRAM |
|
| 5 | MB81C79B |
Fujitsu |
CMOS 72K-BIT HIGH-SPEED SRAM |
|
| 6 | MB81C1000A |
Fujitsu |
CMOS 1M x 1 Bit Fast page Mode Dynamic RAM |
|
| 7 | MB81C4251 |
Fujitsu Media Devices |
1M-Bit Dual Port CMOS DRAM |
|
| 8 | MB81C4253 |
Fujitsu Media Devices |
1M-Bit Dual Port CMOS DRAM |
|
| 9 | MB81C4256-10 |
ETC |
CMOS 1M-Bit DRAM |
|
| 10 | MB81C4256A |
Fujitsu Media Devices |
256K x 4-Bit Fast Page Mode Low Power DRAM |
|
| 11 | MB81C51 |
Fujitsu |
CMOS TAG RANDOM ACCESS MEMORY |
|
| 12 | MB81C67 |
Fujitsu |
CMOS 16K-BIT HIGH-SPEED SRAM |
|