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January 1990 Edition 3.0 DATA SHEET OJ FUJITSU MB81 C67-351-451-55 CMOS 16K-BIT HIGH-SPEED SRAM 16K Words x 1 Bit High-Speed CMOS Static Random Access Memory The FujRsu MB81C67 is a 16.384 words x 1 bR static random access memory fabricated wRh a CMOS silicon gate process. All pins are TTL compatible and a single +5 V power supply is required. A chip sel.
O-pin Plastic Package: DIP MB81C67-xxP
o Standard 20-pad Ceramic Package: LCC MB81C67-xxTV
• Standard 20-pin Ceramic Package: CERDIP MB81C67-xxZ
• Pin compatible wRh Fujitsu MB8167A
~
CERAMIC PACKAGE CERDIP DlP-20C-C03
~
,CERAMIC PACKAGE LCC-20C-F01
PLASTIC PACKAGE DIP-20P-M01
PIN ASSIGNMENT
..
Absolute Maximum Ratings (See Note)
Rating
Symbol
Value
Unit
Supply Voltage
Vce
-0.5 to +7.0
V
Input Voltaae on any pin wRh respect to ND
VIN
-{3.5 to +7.0
V
Output Vott~e on any pin wRh
respect to G D
VOUT
-0.510+7.0
V
Output Current Power Dissipation
loUT
±50
mA
Po
1.2
W
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MB81C68A |
Fujitsu |
CMOS 16K-BIT HIGH-SPEED SRAM |
|
| 2 | MB81C69A |
Fujitsu |
CMOS 16K-BIT HIGH-SPEED SRAM |
|
| 3 | MB81C1000A |
Fujitsu |
CMOS 1M x 1 Bit Fast page Mode Dynamic RAM |
|
| 4 | MB81C4251 |
Fujitsu Media Devices |
1M-Bit Dual Port CMOS DRAM |
|
| 5 | MB81C4253 |
Fujitsu Media Devices |
1M-Bit Dual Port CMOS DRAM |
|
| 6 | MB81C4256-10 |
ETC |
CMOS 1M-Bit DRAM |
|
| 7 | MB81C4256A |
Fujitsu Media Devices |
256K x 4-Bit Fast Page Mode Low Power DRAM |
|
| 8 | MB81C51 |
Fujitsu |
CMOS TAG RANDOM ACCESS MEMORY |
|
| 9 | MB81C71A |
Fujitsu |
CMOS 64K-Bit High Speed SRAM |
|
| 10 | MB81C74 |
Fujitsu |
CMOS 64K-BIT HIGH-SPEED SRAM |
|
| 11 | MB81C75 |
Fujitsu |
CMOS 64K-BIT HIGH-SPEED SRAM |
|
| 12 | MB81C78A |
Fujitsu |
CMOS 64K-Bit High Speed SRAM |
|