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April 1990 Edition 3.0 DATA SHEET 00 FUJITSU MB81 C68A-251-301-35 CMOS 16K-BIT HIGH-SPEED SRAM 4K Words x 4 Bits Static Random Access Memory with Super High-Speed and Automatic Power Down The Fuj~su MB81C68A is a 4,096 words x 4 bits static random access memory fabricated w~h a CMOS silicon gate process. The memory uses asynchronous circu~ry. All pins ar.
ax. (Active) 138 mW max. (Standby, TTL level) 83 mW max. (Standby, CMOS level)
• Single +5 V power supply ±1 0% tolerance
• TTL compatible inputs and outputs
• Three-state outputs w~h OR-tie capac~y
• Chip select for simplified memory expansion, automatic power down
• Electrostatic protection for all inputs and outputs
• Standard 2O-pin Plastic Package:
DIP MBS1C68A-xxP
ZIP
MB81C6SA-xxPSZ
• Standard 20-pin Ceramic Package: CERDIP MB81C68A-xxZ
Absolute Maximum Ratings (See Note)
Rating
Symbol
Value
UnH
Supply Voltage
Vcc
-{).5 to +7.0
V
Input Voltaae on any pin w~h respect to.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MB81C67 |
Fujitsu |
CMOS 16K-BIT HIGH-SPEED SRAM |
|
| 2 | MB81C69A |
Fujitsu |
CMOS 16K-BIT HIGH-SPEED SRAM |
|
| 3 | MB81C1000A |
Fujitsu |
CMOS 1M x 1 Bit Fast page Mode Dynamic RAM |
|
| 4 | MB81C4251 |
Fujitsu Media Devices |
1M-Bit Dual Port CMOS DRAM |
|
| 5 | MB81C4253 |
Fujitsu Media Devices |
1M-Bit Dual Port CMOS DRAM |
|
| 6 | MB81C4256-10 |
ETC |
CMOS 1M-Bit DRAM |
|
| 7 | MB81C4256A |
Fujitsu Media Devices |
256K x 4-Bit Fast Page Mode Low Power DRAM |
|
| 8 | MB81C51 |
Fujitsu |
CMOS TAG RANDOM ACCESS MEMORY |
|
| 9 | MB81C71A |
Fujitsu |
CMOS 64K-Bit High Speed SRAM |
|
| 10 | MB81C74 |
Fujitsu |
CMOS 64K-BIT HIGH-SPEED SRAM |
|
| 11 | MB81C75 |
Fujitsu |
CMOS 64K-BIT HIGH-SPEED SRAM |
|
| 12 | MB81C78A |
Fujitsu |
CMOS 64K-Bit High Speed SRAM |
|